FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1210HC1R5KGT | 1.5μH | 10% | 30 | 1.95 | |
| FHW1210HC1R5JGT | 1.5μH | 5% | 30 | 1.95 | |
| FHW1210HC1R5GGT | 1.5μH | 2% | 30 | 1.95 | |
| FHW1008UC1R5GGT | 1.5μH | 2% | 28 | 2.3 | |
| FHW1008UC1R5JGT | 1.5μH | 5% | 28 | 2.3 | |
| FHW1008UC1R5KGT | 1.5μH | 10% | 28 | 2.3 | |
| FHW0805UC1R5JGT | 1.5μH | 5% | 18 | 2.8 | |
| FHW0805UC1R5KGT | 1.5μH | 10% | 18 | 2.8 | |
| FHW1210HC1R3GGT | 1.3μH | 2% | 35 | 1.9 | |
| FHW1210HC1R3JGT | 1.3μH | 5% | 35 | 1.9 | |
| FHW1210HC1R3KGT | 1.3μH | 10% | 35 | 1.9 | |
| FHW1210HC1R2JGT | 1.2μH | 5% | 35 | 1.87 | |
| FHW1210HC1R2KGT | 1.2μH | 10% | 35 | 1.87 | |
| FHW1210HC1R2GGT | 1.2μH | 2% | 35 | 1.87 | |
| FHW1008UC1R2GGT | 1.2μH | 2% | 35 | 2 |